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>80%热膨胀系数20-300℃)3.3×10-6/K-1密度(20℃)2.23g/cm3加工温度104dpas)1220℃退火温度:560℃软化温度:820℃折射率1.47导热率:1.2Wm-1K-1Silicon content>80%Coefficient of thermal expansion20-300℃)3.3×10-6/K-1Density20℃)2.23g/cm3Hot work temperature104dpas)1220℃Annealing temperature560℃Softening temperature820℃Refractive Index1.47Thermal Conductivity1.2Wm-1K-1
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